FZ1200R12HP4HOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FZ1200R12HP4HOSA2 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
50 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
9
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X9
Number of Elements
3
Configuration
Single Switch
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
7150W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
1.79kA
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
1790A
Turn On Time
890 ns
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 1200A
Turn Off Time-Nom (toff)
1550 ns
IGBT Type
Trench
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
74nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2
$589.38500
$1178.77
FZ1200R12HP4HOSA2 Product Details
FZ1200R12HP4HOSA2 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FZ1200R12HP4HOSA2 Applications
? UPSsystems
? Highpowerconverters
? Motordrives
? Windturbines
FZ1200R12HP4HOSA2 Features
? 500-mA low-dropout regulator with enable
? Available in fixed and adjustable (1.2-V to 5.5-V)