FZ1200R12KF5NOSA1 Description

Infineon FZ1200R12KF5NOSA1 is an IGBT Dual, 1200A, 1200V Module. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module. Normal electrical connections between the dies include half-bridge, 3-level, dual, chopper, booster, etc.

Power may be turned on and off quickly and with excellent energy efficiency using an IGBT power module, which serves as a switch.

Due to its capacity to improve switching, temperature, weight, and cost performance, IGBT power modules are increasingly used as the preferred technology for high-power applications.

FZ1200R12KF5NOSA1 Features

• Industrial standard package

• Medium Switching Speed

• 2500V Isolation

• 140mm Base Width

• IGBT for Inverter

• Pressure Contact Technology

• Electrically insulated base plate

FZ1200R12KF5NOSA1 Applications

• Controlled Rectifiers

• Softstart AC motor control

• Low Frequency Inverter

• Drives

• Frequency Converter

• Line rectifying 50/60 Hz

• Deep Cycle Applications