FZ400R65KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ400R65KE3NOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
7
Operating Temperature
-50°C~125°C
Published
2002
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Configuration
Half Bridge
Element Configuration
Dual
Power - Max
8350W
Halogen Free
Not Halogen Free
Input
Standard
Collector Emitter Voltage (VCEO)
6.5kV
Max Collector Current
400A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
6500V
Current - Collector (Ic) (Max)
800A
Vce(on) (Max) @ Vge, Ic
3.4V @ 15V, 400A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
110nF @ 25V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2
$1,972.71000
$2
FZ400R65KE3NOSA1 Product Details
FZ400R65KE3NOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
FZ400R65KE3NOSA1 Applications
·Medium voltage converters
·Traction drives
FZ400R65KE3NOSA1 Features
·Low VcEsat
Mechanical Features
·AlSiC base plate for increased thermal cycling capability