IAUT300N10S5N015ATMA1

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IAUT300N10S5N015ATMA1

Manufacturer part number:IAUT300N10S5N015ATMA1

Manufacturer:Infineon Technologies

Description:IAUT300N10S5N015ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IAUT300N10S5N015ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerSFN
Surface Mount	YES
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-HSOF-8
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	OptiMOS™-5
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-F2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	375W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	29 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 275μA
Input Capacitance (Ciss) (Max) @ Vds	16011pF @ 50V
Current - Continuous Drain (Id) @ 25°C	300A Tc
Gate Charge (Qg) (Max) @ Vgs	216nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	300A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	652 mJ
Max Junction Temperature (Tj)	175°C
Height	2.4mm
RoHS Status	ROHS3 Compliant