IGB15N65S5ATMA1                               Description

The fundamental function of the IGBT is rather simple. A positive voltage UGE from gate to emitter turns on the MOSFET. Then, the voltage connected to the collector can drive the base current through the bipolar transistor and the MOSFET; the bipolar transistor turns on and the load current can flow.

IGB15N65S5ATMA1                              Applications

?Energy Generation

-Solar String Inverter

-Solar Micro Inverter

?Industrial Power Supplies

-Industrial SMPS

-Industrial UPS

?Metal Treatment

-Welding

?Energy Distribution

-Energy Storage

?Infrastructure–Charge

-Charger

IGB15N65S5ATMA1                                      Features    

HighspeedS5technologyoffering

?High speed smooth switching device for hard&soft switching

?Very Low VCE sat,1.35Vatnominalcurrent

?Plug and play replacement of previous generation IGBTs

?650Vbreakdownvoltage

?Low QG

?Maximumjunctiontemperature175°C

?Pb-free lead plating;RoHS compliant