HGTP7N60A4D SMPS IGBT Description

The HGTP7N60A4D combines the best features of the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

HGTP7N60A4D SMPS IGBT Features

• 14A, 600V @ TC = 110°C

• Low Saturation Voltage : V CE(sat) = 1.9 V @ I C = 7A

• Typical Fall Time. . . . . . . . . . 75ns at TJ = 125°C

• Low Conduction Loss

• High Frequency

HGTP7N60A4D SMPS IGBT Applications

• Other Industrial Applications

• Uninterruptible Power Supply

• Power Factor Corrected (PFC) Converters

• Welding

• Adjustable Switching Power Supply (SMPS)