IKW30N65H5XKSA1                 Description

A trench-gate field-stop insulated gate bipolar transistor (IGBT) is a device that might be used in such applications as motor controllers, welding machines, induction heating, and power inverters.

IKW30N65H5XKSA1                Features

High speed H5 technology offering

·Best-in-Class efficiencyin hard switching and resonant topologies

·Plug and play replacement of previousgenerationIGBTs+650V breakdown voltage·Low gate charge QG

·IGBT copacked with RAPID 1 fast and soft antiparallel diode·Maximum junction temperature175°℃

·Qualified according to JEDEC for target applications·Pb-free lead plating: RoHS compliant

·Complete product spectrum and PSpice Models

IKW30N65H5XKSA1               Applications

·Solar converters

·Uninterruptible power supplies·Welding converters

·Mid to high range switching frequency converters