IXA55I1200HJ

new-10%

Manufacturer part number:IXA55I1200HJ

Manufacturer:IXYS

Description:IXYS SEMICONDUCTOR IXA55I1200HJ IGBT Single Transistor, 84 A, 2.1 V, 290 W, 1.2 kV, TO-247AD, 3 Pins

Case Package:SOT-23

Datasheet:IXA55I1200HJ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	290W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	290W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	84A
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.1V
Turn On Time	110 ns
Test Condition	600V, 50A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
Gate Charge	190nC
Switching Energy	4.5mJ (on), 5.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Height	21.34mm
Length	16.13mm
Width	5.21mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant