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IRG8CH106K10F

  • IRG8CH106K10F
  • IRG8CH106K10F

IRG8CH106K10F

IRG8CH106K10F

Infineon Technologies

IRG8CH106K10F datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG8CH106K10F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~175°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Input Type Standard
Collector Emitter Voltage (VCEO) 2V
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 110A, 1Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 110A
Gate Charge 700nC
Td (on/off) @ 25°C 80ns/380ns
RoHS Status RoHS Compliant
IRG8CH106K10F Product Details

IRG8CH106K10F Description


IRG8CH106K10F, manufactured by Infineon Technologies. Its category belongs to Electronic Components ICs. It is applied to many fields, like Automotive Infotainment & cluster Industrial Test & measurement Personal electronics Gaming . And the main parameters of this part is: IGBT 1200V 110A Die. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).



IRG8CH106K10F Features


  • Package/Case: Die

  • Device Package: Die

  • RoHS: Lead free / RoHS Compliant



IRG8CH106K10F Applications


  • Industrial

  • Automotive

  • Personal electronics


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