IGC11T120T8LX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGC11T120T8LX1SA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Bulk
Published
2015
Series
TrenchStop™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUUC-N2
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Drain to Source Voltage (Vdss)
1.2kV
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Dual Supply Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Vce(on) (Max) @ Vge, Ic
2.07V @ 15V, 8A
IGBT Type
Trench Field Stop
Current - Collector Pulsed (Icm)
24A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.75000
$2.75
IGC11T120T8LX1SA1 Product Details
IGC11T120T8LX1SA1 Description
IGC11T120T8LX1SA1 provided by Infineon Technologies is a type of TRENCHSTOPTM IGBT4 low-power chip optimized for low/medium power drives. It is a three-terminal semiconductor switch device, which can be used in high-efficiency and fast-switching scenarios in various electronic devices. Typically used primarily in amplifiers and some complex waveforms that are switched/processed via Pulse Width Modulation (PWM).