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IGC11T120T8LX1SA1

IGC11T120T8LX1SA1

IGC11T120T8LX1SA1

Infineon Technologies

IGC11T120T8LX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGC11T120T8LX1SA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Bulk
Published 2015
Series TrenchStop™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUUC-N2
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 1.2kV
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Dual Supply Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.07V @ 15V, 8A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 24A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.75000 $2.75
IGC11T120T8LX1SA1 Product Details

IGC11T120T8LX1SA1 Description


IGC11T120T8LX1SA1 provided by Infineon Technologies is a type of TRENCHSTOPTM IGBT4 low-power chip optimized for low/medium power drives. It is a three-terminal semiconductor switch device, which can be used in high-efficiency and fast-switching scenarios in various electronic devices. Typically used primarily in amplifiers and some complex waveforms that are switched/processed via Pulse Width Modulation (PWM).



IGC11T120T8LX1SA1 Features


Low switching losses

Easy paralleling

Positive temperature coefficient

1200V trench & field stop technology



IGC11T120T8LX1SA1 Applications


Low / medium power drives


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