IGD06N60TATMA1 Description

The IGD06N60TATMA1 is an IGBT in TRENCHSTOP? and Fieldstop technology. The BJT and MOSFET are combined to form the IGBT or Insulated Gate Bipolar Transistor. Its name also alluded to their union. The term "Insulated Gate" describes a MOSFET's extremely high input impedance. It relies on the voltage at its gate terminal to operate rather than drawing any input current. When a BJT's output portion is described as "bipolar," it means that both different types of charge carriers contribute to the current flow. It enables it to operate with extremely high currents and voltages while utilizing low voltage signals. The IGBT is a voltage-controlled device as a result of this hybrid arrangement.

IGD06N60TATMA1 Features

• Low EMI

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175°C

• Short circuit withstand time 5 μs

• TRENCHSTOP? and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

IGD06N60TATMA1 Applications

• Variable Speed Drive for washing machines and air conditioners

• Buck converters

• AC and DC motor drives offering speed control

• It is used in chopper and inverters

• It is used in solar inverters