FGA50S110P

new-10%

Manufacturer part number:FGA50S110P

Manufacturer:ON Semiconductor

Description:FGA50S110P datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGA50S110P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	300W
Number of Elements	1
Element Configuration	Single
Power Dissipation	300W
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.1kV
Max Collector Current	50A
Collector Emitter Breakdown Voltage	1.1kV
Voltage - Collector Emitter Breakdown (Max)	1100V
Collector Emitter Saturation Voltage	2.7V
Turn On Time	370 ns
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 50A
Turn Off Time-Nom (toff)	492 ns
IGBT Type	Trench Field Stop
Gate Charge	195nC
Current - Collector Pulsed (Icm)	120A
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	7.5V
Height	20.1mm
Length	15.8mm
Width	5mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant