IXXK100N60B3H1

new-10%

Manufacturer part number:IXXK100N60B3H1

Manufacturer:IXYS

Description:IGBT Transistors XPT IGBT B3-Class 600V/190Amp CoPacked

Case Package:SOT-23

Datasheet:IXXK100N60B3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA Variation
Number of Pins	3
Weight	10.000011g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	GenX3™, XPT™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	695W
Reach Compliance Code	unknown
Base Part Number	IXX*N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	695W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	200A
Reverse Recovery Time	140 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.8V
Turn On Time	92 ns
Test Condition	360V, 70A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 70A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
Gate Charge	143nC
Current - Collector Pulsed (Icm)	440A
Td (on/off) @ 25°C	30ns/120ns
Switching Energy	1.9mJ (on), 2mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant