STGWA8M120DF3

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Manufacturer part number:STGWA8M120DF3

Manufacturer:STMicroelectronics

Description:STGWA8M120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGWA8M120DF3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~175°C TJ
Series	M
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Base Part Number	STGWA80
Input Type	Standard
Power - Max	167W
Reverse Recovery Time	103ns
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	16A
Test Condition	600V, 8A, 33 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 8A
IGBT Type	Trench Field Stop
Gate Charge	32nC
Current - Collector Pulsed (Icm)	32A
Td (on/off) @ 25°C	20ns/126ns
Switching Energy	390μJ (on), 370μJ (Off)
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
600	$2.35305	$1411.83

STGWA8M120DF3 Description

These IGBTs were created employing cutting-edge, exclusive trench gate field-stop construction. These components are M series IGBTs, which offer the best performance and efficiency for inverter systems where low-loss and short-circuit functionality are critical. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operations.