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IGP30N65F5XKSA1

  • IGP30N65F5XKSA1
  • IGP30N65F5XKSA1

IGP30N65F5XKSA1

IGP30N65F5XKSA1

Infineon Technologies

IGP30N65F5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGP30N65F5XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2013
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 188W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 188W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 55A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 28 ns
Test Condition 400V, 15A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Turn Off Time-Nom (toff) 206 ns
IGBT Type Trench
Gate Charge 65nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 19ns/170ns
Switching Energy 280μJ (on), 70μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $1.70832 $854.16
IGP30N65F5XKSA1 Product Details

IGP30N65F5XKSA1 Description


The IGP30N65F5XKSA1 is Infineon's new TRENCHSTOP?5 IGBT technology that redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for challenging switching applications. 



IGP30N65F5XKSA1 Features


  • 650V breakthrough voltage

  • Compared to Infineon’s Best-in-class HighSpeed 3 family

  • Factor 2.5 lower Q g

  • Factor 2 reduction in switching losses

  • 200mV decrease in V CE(sat)

  • Low C OES/E OSS

  • Mild positive temperature coefficient V CE(sat)

  • Temperature stability of V f


IGP30N65F5XKSA1 Applications


  • Hard switching applications


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