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HGTD1N120BNS9A

  • HGTD1N120BNS9A
  • HGTD1N120BNS9A

HGTD1N120BNS9A

HGTD1N120BNS9A

ON Semiconductor

NPTPIGBT TO252 5.3A 1200V

SOT-23

HGTD1N120BNS9A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 60W
Terminal Form GULL WING
Current Rating 5.3A
Base Part Number HGTD1N120
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 14ns
Element Configuration Single
Power Dissipation 60W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 15 ns
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 67 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 5.3A
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.5V
Max Breakdown Voltage 1.2kV
Turn On Time 24 ns
Test Condition 960V, 1A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 1A
Turn Off Time-Nom (toff) 333 ns
IGBT Type NPT
Gate Charge 14nC
Current - Collector Pulsed (Icm) 6A
Td (on/off) @ 25°C 15ns/67ns
Switching Energy 70μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max 20V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.70122 $1.40244
5,000 $0.66976 $3.3488
HGTD1N120BNS9A Product Details
The ONSEMI HGTD1N120BNS9A is a single NPTPIGBT transistor in a TO252 package. It is designed for use in high-power applications, with a maximum current rating of 5.3A and a maximum voltage rating of 1200V. This transistor is ideal for use in applications such as motor control, power conversion, and power switching. It features a low on-state voltage drop, fast switching speed, and low gate drive power. The HGTD1N120BNS9A is a reliable and efficient solution for high-power applications.

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