IRG4BC20KDSTRRP Description

The IRG4BC20KDSTRRP is a 600V Discrete IGBT with a very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP? IGBT technology leads to significant improvement of static as well as the dynamic performance of the device due to the combination of trench top-cell and filed stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

IRG4BC20KDSTRRP Features

Lowest Vce (sat) drop for lower conduction losses

Low switching losses

Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)

High ruggedness, temperature stable behavior

Low EMI emissions

Low gate charge

Very tight parameter distribution

Highest efficiency

Low conduction and switching losses

IRG4BC20KDSTRRP Applications

Power Management

Alternative Energy

Industrial

Automotive 

Advanced driver assistance systems (ADAS) 

Communications equipment 

Wired networking 

Enterprise systems 

Enterprise projectors