IXGH30N120C3H1

new-10%

Manufacturer part number:IXGH30N120C3H1

Manufacturer:IXYS

Description:IGBT 1200V 48A 250W TO247AD

Case Package:SOT-23

Datasheet:IXGH30N120C3H1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	GenX3™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*30N120
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	4.2V
Max Collector Current	48A
Reverse Recovery Time	70 ns
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	60 ns
Test Condition	600V, 24A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	4.2V @ 15V, 24A
Turn Off Time-Nom (toff)	415 ns
IGBT Type	PT
Gate Charge	80nC
Current - Collector Pulsed (Icm)	115A
Td (on/off) @ 25°C	18ns/106ns
Switching Energy	1.45mJ (on), 470μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant