STGW30H60DFB Description

These devices are IGBTs developed using an advanced proprietary trench gate field stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in a safer paralleling operation.

STGW30H60DFB Features

Maximum junction temperature: TJ = 175 °C

High-speed switching series

Minimized tail current

Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A

Tight parameter distribution

Safe paralleling

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast soft recovery antiparallel diode

STGW30H60DFB Applications

Photovoltaic inverters

High-frequency converters