RGTH00TS65DGC11

new-10%

Manufacturer part number:RGTH00TS65DGC11

Manufacturer:ROHM Semiconductor

Description:IGBT 650V 85A 277W TO-247N

Case Package:SOT-23

Datasheet:RGTH00TS65DGC11 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2014
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Power Dissipation	277W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	277W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	650V
Max Collector Current	85A
Reverse Recovery Time	54 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.6V
Turn On Time	102 ns
Test Condition	400V, 50A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 50A
Continuous Collector Current	50A
Turn Off Time-Nom (toff)	221 ns
IGBT Type	Trench Field Stop
Gate Charge	94nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	39ns/143ns
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant