IHD10N60RA

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Manufacturer part number:IHD10N60RA

Manufacturer:Infineon Technologies

Description:IHD10N60RA datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IHD10N60RA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
Terminal Finish	MATTE TIN
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	110W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	110W
Transistor Application	POWER CONTROL
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	20A
Collector Emitter Breakdown Voltage	600V
Test Condition	400V, 10A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 10A
Turn Off Time-Nom (toff)	355 ns
IGBT Type	Trench
Gate Charge	62nC
Current - Collector Pulsed (Icm)	30A
Td (on/off) @ 25°C	-/170ns
Switching Energy	270μJ
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.7V
RoHS Status	RoHS Compliant