IRG4PH40KDPBF

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IRG4PH40KDPBF

Manufacturer part number:IRG4PH40KDPBF

Manufacturer:Infineon Technologies

Description:IRG4PH40KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PH40KDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	160W
Peak Reflow Temperature (Cel)	250
Current Rating	30A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Element Configuration	Single
Power Dissipation	160W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	50 ns
Transistor Application	MOTOR CONTROL
Rise Time	31ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	96 ns
Collector Emitter Voltage (VCEO)	3.4V
Max Collector Current	30A
Reverse Recovery Time	63 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3.4V
Turn On Time	82 ns
Test Condition	800V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.4V @ 15V, 15A
Turn Off Time-Nom (toff)	730 ns
Gate Charge	94nC
Current - Collector Pulsed (Icm)	60A
Td (on/off) @ 25°C	50ns/96ns
Switching Energy	1.31mJ (on), 1.12mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	3V
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free