IRGP4263D-EPBF

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Manufacturer part number:IRGP4263D-EPBF

Manufacturer:Infineon Technologies

Description:IRGP4263D-EPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP4263D-EPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	325W
Rise Time-Max	80ns
Element Configuration	Single
Input Type	Standard
Power - Max	325W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.1V
Max Collector Current	90A
Reverse Recovery Time	170 ns
Collector Emitter Breakdown Voltage	650V
Collector Emitter Saturation Voltage	1.7V
Test Condition	400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 48A
Gate Charge	145nC
Current - Collector Pulsed (Icm)	192A
Td (on/off) @ 25°C	70ns/140ns
Switching Energy	2.9mJ (on), 1.4mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	7.7V
Fall Time-Max (tf)	50ns
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free