IRG4RC10UDTRRP Description

IRG4RC10UDTRRP is a type of insulated gate bipolar transistor with ultrafast soft recovery diode, which is optimized for high operating up to 8-40 kHz in hard switching, ＞200 kHz in resonant mode. As a Generation 4 IGBT,  it is able to offer tighter parameter distribution and higher efficiency compared with Generation 3. The IRG4RC10UDTRRP IGBT ensures lower losses than MOSFET's conduction and Diode losses.

IRG4RC10UDTRRP Features

Industry-standard TO-252AA packages

Extremely tight Vce(on) distribution

Tighter parameter distribution

Highest efficiencies available

IRG4RC10UDTRRP Applications

Industrial motor drive

Solar inverters

Welding