STGP100N30 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGP100N30 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
STripFET™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
250W
Base Part Number
STGP100
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
250W
Transistor Application
GENERAL PURPOSE SWITCHING
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
330V
Max Collector Current
90A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
330V
Test Condition
180V, 25A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 50A
Turn Off Time-Nom (toff)
310 ns
Td (on/off) @ 25°C
-/134ns
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.40000
$6.4
10
$5.74800
$57.48
100
$4.70930
$470.93
500
$4.00890
$2004.45
STGP100N30 Product Details
STGP100N30 Description
STGP100N30 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGP100N30 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.