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NGTB40N120IHRWG

  • NGTB40N120IHRWG
  • NGTB40N120IHRWG

NGTB40N120IHRWG

NGTB40N120IHRWG

ON Semiconductor

NGTB40N120IHRWG datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB40N120IHRWG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Weight 6.500007g
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 384W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Input Type Standard
Power - Max 384W
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.3V
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 225nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C -/230ns
Switching Energy 950μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 21.4mm
Length 16.25mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.20000 $5.2
30 $4.41800 $132.54
120 $3.82883 $459.4596
510 $3.25941 $1662.2991
1,020 $2.74890 $2.7489
NGTB40N120IHRWG Product Details

NGTB40N120IHRWG Description


NGTB40N120IHRWG developed by ON Semiconductor emerges as an Insulated Gate Bipolar Transistor (IGBT) with a robust and cost-effective Field Stop (FS) Trench construction. Both low on?state voltage and minimal switching loss are provided to enable it well suited for resonant or soft switching applications. It is co-packaged with a rugged co?packaged free-wheeling diode featuring a low forward voltage. The NGTB40N120IHRWG IGBT is able to provide high efficiency in resonant or soft switching applications.



NGTB40N120IHRWG Features


A rugged co?packaged free wheeling diode

A robust and cost-effective Field Stop (FS) Trench construction

Low on?state voltage 

Minimal switching loss



NGTB40N120IHRWG Applications


Inductive heating

Consumer appliances

Soft switching


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