IGP10N60TXKSA1 Description

The IGP10N60TXKSA1 is an Infineon's 600 V, 10 A single TRENCHSTOP? IGBT3 in a TO220 package, which significantly improves static and the dynamic performance of the device, due to the combination of trench-cell and field stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

IGP10N60TXKSA1 Features

Lowest VCEsat drop for lower conduction losses

Low switching losses

Easy parallel switching capability due to positive temperature coefficient in VCEsat

Very soft, fast recovery anti-parallel Emitter Controlled Diode

High ruggedness, stable temperature behavior

Low EMI emissions

Low gate charge

Very tight parameter distribution

IGP10N60TXKSA1 Applications

Automotive 

Body electronics & lighting 

Communications equipment 

Wired networking 

Industrial 

Grid infrastructure