IHW15N120R2

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Manufacturer part number:IHW15N120R2

Manufacturer:Infineon Technologies

Description:IHW15N120R2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IHW15N120R2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2006
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	357W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	357W
Case Connection	COLLECTOR
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	30A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.8V
Test Condition	600V, 15A, 14.8 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.75V @ 15V, 15A
Turn Off Time-Nom (toff)	432 ns
IGBT Type	Trench Field Stop
Gate Charge	133nC
Current - Collector Pulsed (Icm)	45A
Td (on/off) @ 25°C	-/282ns
Switching Energy	900μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.4V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free