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IHW20N120R3FKSA1

IHW20N120R3FKSA1

IHW20N120R3FKSA1

Infineon Technologies

IHW20N120R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW20N120R3FKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 310W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 310W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 40A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A
Turn Off Time-Nom (toff) 538 ns
IGBT Type Trench
Gate Charge 211nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C -/387ns
Switching Energy 950μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.851477 $0.851477
10 $0.803280 $8.0328
100 $0.757811 $75.7811
500 $0.714916 $357.458
1000 $0.674449 $674.449
IHW20N120R3FKSA1 Product Details

IHW20N120R3FKSA1 Description


IHW20N120R3FKSA1, provided by Infineon Technologies, is a type of reverse conducting IGBT with a monolithic body diode with low forward voltage designed for soft commutation only. Based on TRENCHSTOP? technology, it is able to deliver high ruggedness, stable temperature behavior, very low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. Therefore, IHW20N120R3FKSA1 IGBT is well suited for a wide range of applications, including resonant converters, inverterized microwave ovens, and more.



IHW20N120R3FKSA1 Features


High ruggedness

Stable temperature behavior

Very low VCEsat

Easy parallel switching capability

Low EMI



IHW20N120R3FKSA1 Applications


Induction cooking

Inverterized microwave ovens

Resonant converters


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