IHW20N135R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IHW20N135R5XKSA1 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2013
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
288W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
288W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.35kV
Max Collector Current
40A
Collector Emitter Breakdown Voltage
1.35kV
Voltage - Collector Emitter Breakdown (Max)
1350V
Test Condition
600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
1.85V @ 15V, 20A
Turn Off Time-Nom (toff)
450 ns
Gate Charge
170nC
Current - Collector Pulsed (Icm)
60A
Td (on/off) @ 25°C
-/235ns
Switching Energy
950μJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.25000
$4.25
10
$3.84600
$38.46
240
$3.19963
$767.9112
720
$2.76418
$1990.2096
1,200
$2.37380
$2.3738
IHW20N135R5XKSA1 Product Details
IHW20N135R5XKSA1 Description
IHW20N135R5XKSA1 is a single IGBT with a break down voltage of 1350V from Infineon Technologies. IHW20N135R5XKSA1 operates between -40°C~175°C TJ, and its maximum collector current is 40A. The IHW20N135R5XKSA1 has three pins and it is available in Tube packaging way. IHW20N135R5XKSA1 has a 1350V Voltage - Collector Emitter Breakdown (Max) value.
IHW20N135R5XKSA1 Features
Low EMI
Qualified according to JESD-022 for target applications