IKW15N120H3FKSA1 Description

The IKW15N120H3FKSA1 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behavior, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

IKW15N120H3FKSA1 Features

• Halogen-free

• Green product

• Short-circuit capability

• Excellent performance

• Very good EMI behaviour

• Low switching and conduction losses

• Low switching losses for high efficiency

• Best-in-class IGBT efficiency and EMI behaviour

• Fast switching behavior with low EMI emissions

• Small gate resistor for reduced delay time and voltage overshoot

• Packaged with and without freewheeling diode for increased design freedom

• Optimized diode for target applications, meaning further improvement in switching losses

• Low gate resistor selection is possible (down to 5R) whilst maintaining excellent switching behaviour

• Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz

IKW15N120H3FKSA1 Applications

• Power Management

• Alternative Energy