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IHW30N120R5XKSA1

IHW30N120R5XKSA1

IHW30N120R5XKSA1

Infineon Technologies

IHW30N120R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW30N120R5XKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~175°C TJ
Series TrenchStop™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 330W
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 60A
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 235nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/330ns
Switching Energy 1.1mJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
240 $2.95188 $708.4512
IHW30N120R5XKSA1 Product Details

IHW30N120R5XKSA1   Features

Powerful monolithic body diode with a low forward voltage

designed for soft commutation

TRENCHSTOPTM technology offering:

- very tight parameter distribution

- high ruggedness, stable temperature behavior

- low VcEsat

- easy parallel switching capability due to positive

temperature coefficient in VcEsat

Low EMI

Qualified according to JESD-022 for target applications

Pb-free lead plating; RoHS compliant

Halogen-free (according to IEC 61249-2-21)



IHW30N120R5XKSA1   Applications

Induction cooking

Microwave ovens




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