FGH60T65SHD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
FGH60T65SHD-F155 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Weight
6.39g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Tin (Sn)
Max Power Dissipation
349W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
349W
Collector Emitter Voltage (VCEO)
2.1V
Max Collector Current
120A
Reverse Recovery Time
34.6 ns
Collector Emitter Breakdown Voltage
650V
Test Condition
400V, 60A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 60A
IGBT Type
Trench Field Stop
Gate Charge
102nC
Current - Collector Pulsed (Icm)
180A
Td (on/off) @ 25°C
26ns/87ns
Switching Energy
1.69mJ (on), 630μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.670338
$3.670338
10
$3.462583
$34.62583
100
$3.266587
$326.6587
500
$3.081686
$1540.843
1000
$2.907251
$2907.251
FGH60T65SHD-F155 Product Details
FGH60T65SHD-F155 Description
FGH60T65SHD-F155 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGH60T65SHD-F155 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.