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HGT1S20N35G3VLS

HGT1S20N35G3VLS

HGT1S20N35G3VLS

ON Semiconductor

HGT1S20N35G3VLS datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

HGT1S20N35G3VLS Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Operating Temperature-40°C~175°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Logic
Power - Max 150W
Voltage - Collector Emitter Breakdown (Max) 375V
Current - Collector (Ic) (Max) 20A
Test Condition 300V, 10A, 25Ohm, 5V
Vce(on) (Max) @ Vge, Ic 2.8V @ 5V, 20A
Gate Charge28.7nC
Td (on/off) @ 25°C -/15μs
In-Stock:3988 items

HGT1S20N35G3VLS Product Details

HGT1S20N35G3VLS Description


This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.


HGT1S20N35G3VLS Features

? Logic Level Gate Drive

? Internal Voltage Clamp

? ESD Gate Protection

? TJ = 175oC

? Ignition Energy Capable


HGT1S20N35G3VLS Applications


? TFT LCD Displays for Notebooks

? TFT LCD Displays for Monitors

? Portable DVD Players

? Tablet PCs


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