Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Weight	5.3g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	170W
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*60N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation	170W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	75A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.2V
Turn On Time	62 ns
Test Condition	480V, 40A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Turn Off Time-Nom (toff)	198 ns
IGBT Type	PT
Gate Charge	115nC
Current - Collector Pulsed (Icm)	260A
Td (on/off) @ 25°C	24ns/70ns
Switching Energy	830μJ (on), 450μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
30	$26.40000	$792

IXGR60N60C3C1

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