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NGB8204NT4G

NGB8204NT4G

NGB8204NT4G

ON Semiconductor

NGB8204NT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGB8204NT4G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 400V
Max Power Dissipation115W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating18A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number NGB8204
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Rise Time-Max 7000ns
Element ConfigurationSingle
Power Dissipation115W
Case Connection COLLECTOR
Input Type Logic
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 430V
Max Collector Current 18A
Collector Emitter Breakdown Voltage430V
Turn On Time5200 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 4V, 15A
Turn Off Time-Nom (toff) 13000 ns
Current - Collector Pulsed (Icm) 50A
Gate-Emitter Voltage-Max 18V
Gate-Emitter Thr Voltage-Max 1.9V
Fall Time-Max (tf) 15000ns
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3636 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.852468$0.852468
10$0.804216$8.04216
100$0.758694$75.8694
500$0.715749$357.8745
1000$0.675235$675.235

NGB8204NT4G Product Details

NGB8204NT4G Description


NGB8204NT4G is a 400V N?Channel D2PAK Ignition IGBT. This Logic Level Insulated Gate Bipolar Transistor (IGBT) NGB8204NT4G features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. The Operating and Storage Temperature Range is between -55 and 175℃. And the Switch NGB8204NT4G is in the TO-263-3 package with 115W power dissipation.



NGB8204NT4G Features


Ideal for Coil?on?Plug Applications

Gate?Emitter ESD Protection

Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load

Integrated ESD Diode Protection

New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area

Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices

Low Saturation Voltage

High Pulsed Current Capability

Integrated Gate?Emitter Resistor (RGE)

Emitter Ballasting for Short?Circuit Capability

Pb?Free Devices



NGB8204NT4G Applications


Communications equipment

Wired networking

Industrial

Grid infrastructure

Enterprise systems

Enterprise projectors


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