NGB8204NT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
NGB8204NT4G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
400V
Max Power Dissipation
115W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
18A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
NGB8204
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Rise Time-Max
7000ns
Element Configuration
Single
Power Dissipation
115W
Case Connection
COLLECTOR
Input Type
Logic
Transistor Application
AUTOMOTIVE IGNITION
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
430V
Max Collector Current
18A
Collector Emitter Breakdown Voltage
430V
Turn On Time
5200 ns
Vce(on) (Max) @ Vge, Ic
2.5V @ 4V, 15A
Turn Off Time-Nom (toff)
13000 ns
Current - Collector Pulsed (Icm)
50A
Gate-Emitter Voltage-Max
18V
Gate-Emitter Thr Voltage-Max
1.9V
Fall Time-Max (tf)
15000ns
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.852468
$0.852468
10
$0.804216
$8.04216
100
$0.758694
$75.8694
500
$0.715749
$357.8745
1000
$0.675235
$675.235
NGB8204NT4G Product Details
NGB8204NT4G Description
NGB8204NT4G is a 400V N?Channel D2PAK Ignition IGBT. This Logic Level Insulated Gate Bipolar Transistor (IGBT) NGB8204NT4G features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. The Operating and Storage Temperature Range is between -55 and 175℃. And the Switch NGB8204NT4G is in the TO-263-3 package with 115W power dissipation.
NGB8204NT4G Features
Ideal for Coil?on?Plug Applications
Gate?Emitter ESD Protection
Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices