RGS80TSX2DHRC11 datasheet pdf and Transistors - IGBTs - Single product details from ROHM Semiconductor stock available on our website
SOT-23
RGS80TSX2DHRC11 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-40°C~175°C TJ
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
555W
Reverse Recovery Time
198ns
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
80A
Test Condition
600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
104nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
49ns/199ns
Switching Energy
3mJ (on), 3.1mJ (off)
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$12.74000
$12.74
500
$12.6126
$6306.3
1000
$12.4852
$12485.2
1500
$12.3578
$18536.7
2000
$12.2304
$24460.8
2500
$12.103
$30257.5
RGS80TSX2DHRC11 Product Details
RGS80TSX2DHRC11 Description
The material in this paper is provided on a "as is" basis, and ROHM makes no representations as to its accuracy or lack of errors. Any losses, expenditures, or damages incurred by you or third parties as a result of inaccurate or incorrect information pertaining to such information will not be covered in any manner by ROHM. You are urged to carefully read this document and comprehend its contents before using any of our products. The use of any ROHM products in violation of any warning, caution, or note in this document shall not subject ROHM to any liability or responsibility for failure, malfunction, or accident.