IRGR2B60KDPBF

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Manufacturer part number:IRGR2B60KDPBF

Manufacturer:Infineon Technologies

Description:IRGR2B60KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGR2B60KDPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	35W
Base Part Number	IRGR2B60
Rise Time-Max	25ns
Element Configuration	Single
Input Type	Standard
Power - Max	35W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.25V
Max Collector Current	6.3A
Reverse Recovery Time	68 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.95V
Test Condition	400V, 2A, 100 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.25V @ 15V, 2A
IGBT Type	NPT
Gate Charge	12nC
Current - Collector Pulsed (Icm)	8A
Td (on/off) @ 25°C	11ns/150ns
Switching Energy	74μJ (on), 39μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	75ns
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant