IHW30N160R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IHW30N160R5XKSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-40°C~175°C TJ
Series
TrenchStop™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
263W
Voltage - Collector Emitter Breakdown (Max)
1600V
Current - Collector (Ic) (Max)
60A
Test Condition
600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 30A
IGBT Type
Trench Field Stop
Gate Charge
205nC
Current - Collector Pulsed (Icm)
90A
Td (on/off) @ 25°C
-/290ns
Switching Energy
2mJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.58000
$5.58
10
$5.04000
$50.4
240
$4.19396
$1006.5504
720
$3.62322
$2608.7184
1,200
$3.11150
$3.1115
IHW30N160R5XKSA1 Product Details
IHW30N160R5XKSA1 Description
IHW30N160R5XKSA1 manufactured by Infineon Technologies belongs to the family of reverse conducting IGBTs with powerful monolithic body diodes, which are designed based on TRENCHSTOP? technology for extremely tight parameter distribution, high ruggedness, advanced temperature stable behavior, and low VCEsat. It provides easy parallel switching capability due to the positive temperature coefficient in VCEsat.