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IHW30N160R5XKSA1

IHW30N160R5XKSA1

IHW30N160R5XKSA1

Infineon Technologies

IHW30N160R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW30N160R5XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~175°C TJ
Series TrenchStop™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 263W
Voltage - Collector Emitter Breakdown (Max) 1600V
Current - Collector (Ic) (Max) 60A
Test Condition 600V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 205nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C -/290ns
Switching Energy 2mJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.58000 $5.58
10 $5.04000 $50.4
240 $4.19396 $1006.5504
720 $3.62322 $2608.7184
1,200 $3.11150 $3.1115
IHW30N160R5XKSA1 Product Details

IHW30N160R5XKSA1 Description


IHW30N160R5XKSA1 manufactured by Infineon Technologies belongs to the family of reverse conducting IGBTs with powerful monolithic body diodes, which are designed based on TRENCHSTOP? technology for extremely tight parameter distribution, high ruggedness, advanced temperature stable behavior, and low VCEsat. It provides easy parallel switching capability due to the positive temperature coefficient in VCEsat.



IHW30N160R5XKSA1 Features


  • TRENCHSTOP? technology

  • Low VCEsat

  • High ruggedness

  • Easy parallel switching capability

  • Available in the PG-TO247-3 package



IHW30N160R5XKSA1 Applications


  • Induction cooking

  • Microwave ovens


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