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IHW40N135R5XKSA1

IHW40N135R5XKSA1

IHW40N135R5XKSA1

Infineon Technologies

IHW40N135R5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IHW40N135R5XKSA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~175°C TJ
Series TrenchStop™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Power - Max 394W
Voltage - Collector Emitter Breakdown (Max) 1350V
Current - Collector (Ic) (Max) 80A
Test Condition 600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge 305nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C -/410ns
Switching Energy 2mJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
240 $3.92179 $941.2296
IHW40N135R5XKSA1 Product Details

IHW40N135R5XKSA1 Description


IHW40N135R5XKSA1, provided by Infineon Technologies, is a type of reverse conducting IGBT with a monolithic body diode with low forward voltage designed for soft commutation only. Based on TRENCHSTOPTM technology, it is able to deliver high ruggedness, stable temperature behavior, very low VCEsat, and easy parallel switching capability due to the positive temperature coefficient in VCEsat. Therefore, the IHW40N135R5XKSA1 IGBT is well suited for a wide range of applications, including microwave ovens, induction cooking, and more.



IHW40N135R5XKSA1 Features


High ruggedness

Temperature stable behavior

Very low VCEsat

Easy parallel switching capability

Low EMI



IHW40N135R5XKSA1 Applications


Induction cooking

Microwave ovens


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