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IRG4PC60UPBF

IRG4PC60UPBF

IRG4PC60UPBF

Infineon Technologies

IRG4PC60UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4PC60UPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 520W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 75A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 520W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 39 ns
Transistor Application POWER CONTROL
Rise Time 42ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 200 ns
Collector Emitter Voltage (VCEO) 2V
Max Collector Current 75A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 78 ns
Test Condition 480V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Turn Off Time-Nom (toff) 460 ns
Gate Charge 310nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 39ns/200ns
Switching Energy 280μJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.701mm
Length 15.875mm
Width 5.3086mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $5.06184 $20.24736
IRG4PC60UPBF Product Details

Description


The IRG4PC60UPBF is a 600V Ultrafast IGBT with a frequency range of 8 to 60kHz. The hard switching technique is designed to operate at a high frequency. The IGBT architecture of Generation 4 has a narrower parameter distribution and is more efficient. When utilized with the IR HEXFRED and IR Fred companion diodes, it gives the best results. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed.



Features


  • Industry standard TO-247AC package

  • Lead-Free

  • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode

  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency

  • IGBT's optimized for specified application conditions

  • Designed for best performance when used with IR Hexfred & IR Fred companion diodes

  • Generation 4 IGBT's offer highest efficiency available



Applications


  • Power Management

  • Motor Drive & Control

  • AC and DC Motor Drives Offering Speed Control

  • Chopper and Inverters

  • Solar Inverters


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