IRG4PC60UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRG4PC60UPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
520W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
75A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
520W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
39 ns
Transistor Application
POWER CONTROL
Rise Time
42ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
200 ns
Collector Emitter Voltage (VCEO)
2V
Max Collector Current
75A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Turn On Time
78 ns
Test Condition
480V, 40A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 40A
Turn Off Time-Nom (toff)
460 ns
Gate Charge
310nC
Current - Collector Pulsed (Icm)
300A
Td (on/off) @ 25°C
39ns/200ns
Switching Energy
280μJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6V
Height
20.701mm
Length
15.875mm
Width
5.3086mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$5.06184
$20.24736
IRG4PC60UPBF Product Details
Description
The IRG4PC60UPBF is a 600V Ultrafast IGBT with a frequency range of 8 to 60kHz. The hard switching technique is designed to operate at a high frequency. The IGBT architecture of Generation 4 has a narrower parameter distribution and is more efficient. When utilized with the IR HEXFRED and IR Fred companion diodes, it gives the best results. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed.
Features
Industry standard TO-247AC package
Lead-Free
UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency
IGBT's optimized for specified application conditions
Designed for best performance when used with IR Hexfred & IR Fred companion diodes
Generation 4 IGBT's offer highest efficiency available