AIKW50N65DH5XKSA1     Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

AIKW50N65DH5XKSA1      Features 

High speed H5 technology offering:

·Best-in-Class efficiency in hard switching and resonant topologies

·Plug and play replacement of previous generation IGBTs·650V breakdown voltage·Low gate charge QG

·IGBT copacked with RAPID 1 fast and soft antiparallel diode·Maximum junction temperature 175°C·Dynamically stress tested

·Qualified according to AEC-Q101·Green package(RoHS compliant)

.Complete product spectrum and PSpice

AIKW50N65DH5XKSA1     Applications

·Off-board charger·On-board charger·DC/DC converter

·Power-Factor correction