AUIRG4PH50S

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Manufacturer part number:AUIRG4PH50S

Manufacturer:Infineon Technologies

Description:AUIRG4PH50S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRG4PH50S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.7V
Max Collector Current	57A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	1.7V
Turn On Time	62 ns
Test Condition	960V, 33A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 33A
Turn Off Time-Nom (toff)	2170 ns
Gate Charge	167nC
Current - Collector Pulsed (Icm)	114A
Td (on/off) @ 25°C	32ns/845ns
Switching Energy	1.8mJ (on), 19.6mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Height	20.7mm
Length	15.87mm
Width	5.3086mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant