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IKA08N65H5XKSA1

  • IKA08N65H5XKSA1
  • IKA08N65H5XKSA1

IKA08N65H5XKSA1

IKA08N65H5XKSA1

Infineon Technologies

IKA08N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKA08N65H5XKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2006
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 31.2W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Input Type Standard
Power - Max 31.2W
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.65V
Max Collector Current 10.8A
Reverse Recovery Time 40 ns
Collector Emitter Breakdown Voltage 650V
Collector Emitter Saturation Voltage 1.65V
Test Condition 400V, 4A, 48 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 8A
Gate Charge 22nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 11ns/115ns
Switching Energy 70μJ (on), 30μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 4.8V
Height 16.15mm
Length 10.65mm
Width 4.85mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.312577 $1.312577
10 $1.238280 $12.3828
100 $1.168189 $116.8189
500 $1.102065 $551.0325
1000 $1.039684 $1039.684
IKA08N65H5XKSA1 Product Details

IKA08N65H5XKSA1 Description


The IKA08N65H5XKSA1 is a High Speed 650 V, 8 A hard-switching IGBT TRENCHSTOP? 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-220 package, is defined as the "best-in-class" IGBT.



IKA08N65H5XKSA1 Features


  • 650 V breakthrough voltage

  • Compared to best-in-class HighSpeed 3 family

  • Factor 2.5 lower Qg

  • Factor 2 reduction in switching losses

  • 200mV reduction in VCEsat

  • Co-packed with Rapid Si-diode technology

  • Low COES/EOSS

  • Mild positive temperature coefficient VCEsat

  • Temperature stability of Vf



IKA08N65H5XKSA1 Applications


  • Uninterruptible power supply (UPS)

  • Industrial heating and welding


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