IKB03N120H2ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IKB03N120H2ATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Pbfree Code
no
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
HIGH SPEED
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
62.5W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Reverse Recovery Time
42ns
JEDEC-95 Code
TO-220AB
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
9.6A
Turn On Time
16.1 ns
Test Condition
800V, 3A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 3A
Turn Off Time-Nom (toff)
403 ns
Gate Charge
22nC
Current - Collector Pulsed (Icm)
9.9A
Td (on/off) @ 25°C
9.2ns/281ns
Switching Energy
290μJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$1.26550
$1.2655
IKB03N120H2ATMA1 Product Details
IKB03N120H2ATMA1 Description
IKB03N120H2ATMA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IKB03N120H2ATMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IKB03N120H2ATMA1 has the common source configuration.