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IKB03N120H2ATMA1

IKB03N120H2ATMA1

IKB03N120H2ATMA1

Infineon Technologies

IKB03N120H2ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

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IKB03N120H2ATMA1 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature HIGH SPEED
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 62.5W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 42ns
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 9.6A
Turn On Time 16.1 ns
Test Condition 800V, 3A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Turn Off Time-Nom (toff) 403 ns
Gate Charge 22nC
Current - Collector Pulsed (Icm) 9.9A
Td (on/off) @ 25°C 9.2ns/281ns
Switching Energy 290μJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $1.26550 $1.2655
IKB03N120H2ATMA1 Product Details

IKB03N120H2ATMA1 Description

 

IKB03N120H2ATMA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IKB03N120H2ATMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IKB03N120H2ATMA1 has the common source configuration.

 

 

IKB03N120H2ATMA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IKB03N120H2ATMA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 

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