STGW60H65DFB-4 Description

This STGW60H65DFB-4 is an IGBT developed using an advanced proprietary trench gate field-stop structure. The STGW60H65DFB-4 is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates the power path from the driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.

STGW60H65DFB-4 Features

Maximum junction temperature: Tj= 175 °C

Excellent switching performance thanks to the extra driving kelvin pin

Low VcE(sat)= 1.6V (typ.)@Ic=60A 

Minimized tail current

Tight parameter distribution

Safe paralleling

Low thermal resistance

Very fast soft recovery antiparallel diode

STGW60H65DFB-4 Applications

Photovoltaic inverters

High-frequency converters

Automotive 

Advanced driver assistance systems (ADAS) 

Communications equipment