IKQ100N60TAXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IKQ100N60TAXKSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2013
Series
Automotive, AEC-Q101, TrenchStop™
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
714W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
1
Element Configuration
Single
Input Type
Standard
Power - Max
714W
Transistor Application
POWER CONTROL
Halogen Free
Halogen Free
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
160A
Reverse Recovery Time
225 ns
Collector Emitter Breakdown Voltage
600V
Turn On Time
83 ns
Test Condition
400V, 100A, 3.6 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 100A
Turn Off Time-Nom (toff)
393 ns
IGBT Type
Trench Field Stop
Gate Charge
610nC
Current - Collector Pulsed (Icm)
400A
Td (on/off) @ 25°C
30ns/290ns
Switching Energy
3.1mJ (on), 2.5mJ (off)
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
240
$9.88529
$2372.4696
IKQ100N60TAXKSA1 Product Details
IKQ100N60TAXKSA1 Description
IKQ100N60TAXKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IKQ100N60TAXKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IKQ100N60TAXKSA1 has the common source configuration.