STGWT40H65FB Description

The STGWT40H65FB IGBT was developed using an advanced proprietary trench gate field-stop structure. The transistor STGWT40H65FB  is a part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.

STGWT40H65FB Features

Maximum junction temperature: TJ = 175 °C

High-speed switching series

Minimized tail current

Very low saturation voltage: VCE(sat) = 1.6 V (Typ) @ IC = 40 A

Safe paralleling

Tight parameter distribution

Low thermal resistance

STGWT40H65FB Applications

Welding

Power factor correction

UPS

Solar inverters

Chargers