IKD04N60R

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Manufacturer part number:IKD04N60R

Manufacturer:Infineon Technologies

Description:IKD04N60R datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IKD04N60R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Cut Tape (CT)
Published	2003
Series	TrenchStop®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	*KD04N60
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	75W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	43ns
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	8A
Power Dissipation-Max (Abs)	75W
Turn On Time	20 ns
Test Condition	400V, 4A, 43 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Turn Off Time-Nom (toff)	342 ns
IGBT Type	Trench
Gate Charge	27nC
Current - Collector Pulsed (Icm)	12A
Td (on/off) @ 25°C	14ns/146ns
Switching Energy	240μJ
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.7V
RoHS Status	RoHS Compliant