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IKD15N60RATMA1

  • IKD15N60RATMA1
  • IKD15N60RATMA1

IKD15N60RATMA1

IKD15N60RATMA1

Infineon Technologies

IKD15N60RATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IKD15N60RATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchStop™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Input Type Standard
Power - Max 250W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 30A
Reverse Recovery Time 110 ns
Collector Emitter Breakdown Voltage 600V
Max Breakdown Voltage 600V
Turn On Time 26 ns
Test Condition 400V, 15A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
Turn Off Time-Nom (toff) 430 ns
IGBT Type Trench Field Stop
Gate Charge 90nC
Current - Collector Pulsed (Icm) 45A
Td (on/off) @ 25°C 16ns/183ns
Switching Energy 370μJ (on), 530μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.307040 $7.30704
10 $6.893434 $68.93434
100 $6.503239 $650.3239
500 $6.135131 $3067.5655
1000 $5.787860 $5787.86
IKD15N60RATMA1 Product Details

IKD15N60RATMA1 Description


IKD15N60RATMA1 is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 400V. The operating temperature of IKD15N60RATMA1 is -55°C~175°C TJ and its Current - Collector (Ic) (Max) is 10A. IKD15N60RATMA1 has 3 pins and it is available in Die packaging way. The Voltage - Collector Emitter Breakdown (Max) of IKD15N60RATMA1 is 600V.



IKD15N60RATMA1 Features


  • Optimised VCEs at and VF for low conduction losses

  • Smooth switching performance leading to low EMI levels

  • Very tight parameter distribution

  • Operating range of 1to20 kHz

  • Maximum junction temperature 175°C

  • Short circuit capability of 5μs



IKD15N60RATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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